au.\*:("ZIPPERIAN, T. E")
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GaP/AlxGa1-xP heterojunction transistors for high-temperature electronic applicationsZIPPERIAN, T. E; DAWSON, L. R.Journal of applied physics. 1983, Vol 54, Num 10, pp 6019-6025, issn 0021-8979Article
Strained-quantum-well, modulation-doped, field-effect transistorZIPPERIAN, T. E; DRUMMOND, T. J.Electronics Letters. 1985, Vol 21, Num 18, pp 823-824, issn 0013-5194Article
Impact ionization coefficients in In0.2Ga0.8 As/GaAs strained-layer superlatticesBULMAN, G. E; ZIPPERIAN, T. E; DAWSON, L. R et al.Applied physics letters. 1986, Vol 49, Num 4, pp 212-214, issn 0003-6951Article
Electron mobilities in In0.2 Ga0.8 As/GaAs strained-layer superlatticesFRITZ, I. J; DAWSON, L. R; ZIPPERIAN, T. E et al.Applied physics letters. 1983, Vol 43, Num 9, pp 846-848, issn 0003-6951Article
The determination of impact ionization coefficients in In0.2Ga0.8As/GaAs strained-layer superlattice Mesa photodiodesBULMAN, G. E; ZIPPERIAN, T. E; DAWSON, L. R et al.Journal of electronic materials. 1986, Vol 15, Num 4, pp 221-227, issn 0361-5235Article
Neutron-induced trapping levels in aluminum gallium arsenideBARNES, C. E; ZIPPERIAN, T. E; DAWSON, L. R et al.Journal of electronic materials. 1985, Vol 14, Num 2, pp 95-118, issn 0361-5235Article
Single-crystal, optical interference filters and integrated high reflector photodiode using multilayers of GaP and GaAsxP1-xGOURLEY, P. L; BIEFELD, R. M; ZIPPERIAN, T. E et al.Applied physics letters. 1986, Vol 49, Num 5, pp 242-244, issn 0003-6951Article
MOCVD-grown InAsSb strained-layer superlattice infrared detectors with photoresponses ≥ 10μmKURTZ, S. R; BIELEFELD, R. M; ZIPPERIAN, T. E et al.Semiconductor science and technology. 1990, Vol 5, Num 3S, pp S24-S26, issn 0268-1242Conference Paper
High-detectivity (> 1 × 1010 cm √Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detectorKURTZ, S. R; DAWSON, L. R; ZIPPERIAN, T. E et al.IEEE electron device letters. 1990, Vol 11, Num 1, pp 54-56, issn 0741-3106Article
Superposition of light-hole and heavy-hole bandgaps in InGaAs/InAlAs strained quantum-well structuresFRITZ, I. J; KLEM, J. F; BRENNAN, T. M et al.Superlattices and microstructures. 1991, Vol 10, Num 1, pp 99-106, issn 0749-6036, 8 p.Article
High-voltage, wavelength-discriminating, light-activated GaAs thyristorCARSON, R. F; HUGHES, R. C; ZIPPERIAN, T. E et al.Electronics Letters. 1989, Vol 25, Num 23, pp 1592-1593, issn 0013-5194Article
Pressure dependence of the E2 and E1 deep levels in GaAs, GaP, and their alloysSAMARA, G. A; BIEFELD, R. M; DAWSON, L. R et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 8, pp 6772-6775, issn 0163-1829, 4 p.Article
S-parameter measurements and microwave applications of superconducting flux flow transistorsMARTENS, J. S; HIETALA, V. M; ZIPPERIAN, T. E et al.IEEE transactions on microwave theory and techniques. 1991, Vol 39, Num 12, pp 2018-2025, issn 0018-9480Conference Paper
GaAs/(In,Ga)As, p-channel, multiple strained quantum well field-effect transistors with high transconductance and high peak saturated drain currentZIPPERIAN, T. E; DAWSON, L. R; DRUMMOND, T. J et al.Applied physics letters. 1988, Vol 52, Num 12, pp 975-977, issn 0003-6951Article
Isothermal measurements and thermal desorption of organic vapors using SAW devicesMARTIN, S. J; RICCO, A. J; GINLEY, D. S et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 1987, Vol 34, Num 2, pp 142-147, issn 0885-3010Article
p-channel strained quantum well, field-effect transistorDRUMMOND, T. J; ZIPPERIAN, T. E; FRITZ, I. J et al.Applied physics letters. 1986, Vol 49, Num 8, pp 461-463, issn 0003-6951Article
An ion-implanted Ga(AsP)/GaP strained-layer superlattice photodetectorMYERS, D. R; WICZER, J. J; ZIPPERIAN, T. E et al.IEEE electron device letters. 1984, Vol 5, Num 8, pp 326-328, issn 0741-3106Article
High temperature superconducting slow-wave coplanar transmission lines with normal-metal crossbarsHIETALA, V. M; MARTENS, J. S; PLUTT, T. A et al.IEEE transactions on microwave theory and techniques. 1994, Vol 42, Num 6, pp 972-975, issn 0018-9480Article
Tl-Ca-Ba-Cu-O step-edge Josephson junctionsMARTENS, J. S; ZIPPERIAN, T. E; VAWTER, G. A et al.Applied physics letters. 1992, Vol 60, Num 9, pp 1141-1143, issn 0003-6951Article
Transport and pinning in high quality Tl-Ca-Ba-Cu-O filmsGINLEY, D. S; VENTURINI, E. L; TIGGES, C. P et al.Physica. C. Superconductivity. 1991, Vol 185/89, pp 2275-2276, issn 0921-4534, p.4Conference Paper
Correlation between photoluminescence data and device performance of p-channel strained-layer materialsJONES, E. D; ZIPPERIAN, T. E; LYO, S. K et al.Journal of electronic materials. 1990, Vol 19, Num 6, pp 533-537, issn 0361-5235Article
Minority-carrier diffusion lengths in GaP/GaAsxP1-x strained-layer superlatticesGOURLEY, P. L; BIEFELD, R. M; ZIPPERIAN, T. E et al.Applied physics letters. 1984, Vol 44, Num 10, pp 983-985, issn 0003-6951Article
Be-implantation doping of GaAsxP1-x/GaP strained-layer superlatticesMYERS, D. R; BIEFELD, R. M; FRITZ, I. J et al.Applied physics letters. 1984, Vol 44, Num 11, pp 1052-1054, issn 0003-6951Article
High temperature superconducting transresistance amplifiers for far infrared detectorsMARTENS, J. S; HIETALA, V. M; ZIPPERIAN, T. E et al.IEEE Transactions on applied superconductivity. 1992, Vol 2, Num 2, pp 111-112Article
The RF performance of long junction active devices using T1CaBaCuO step edge structuresMARTENS, J. S; HIETALA, V. M; ZIPPERIAN, T. E et al.IEEE Transactions on applied superconductivity. 1992, Vol 2, Num 2, pp 74-78Article
